| Key Features | |
|---|---|
| Random read performance up to 900,000 IOPS | |
| Samsung V6 (128 Layer) V-NAND® flash memory type | |
| 2,000,000 hours Mean Time Between Failure (MTBF) | |
| AES-XTS 256-bit Encryption Engine with TCG Opal 2.0 Compliant Management | |
| 1.3 DWPD for 3 years | |
| General Information | |
|---|---|
| Manufacturer | SAMSUNG |
| Manufacturer Part Number | MZQL23T8HCLS-00A07 |
| Product Series | Pm9a3 |
| Product Type | Solid State Drive |
| Technical Information | |
|---|---|
| Form Factor | 2.5 Inch U.2 |
| Product Type | Pcie Gen4 X4 U.2 Ssd |
| Capacity | 3.84tb |
| Interface | Pcie Gen4 X4 |
| Product Status | Mass Production |
| Nand Flash Memory | SAMSUNG V-nand Tlc |
| Usage Application | Data Center, Server |
| Mtbf | 2.0 Million Hours |
| Performance | |
|---|---|
| Sequential Read | 6900 Mb/s |
| Sequential Write | 4100 Mb/s |
| Random Read | 1000k Iops |
| Random Write | 180k Iops |
| Dwpd | 1(5yrs) |
| Physical Characteristics | |
|---|---|
| Dimensions | 100.20x 69.85x 7.0(mm) |